vs-10etf0...fppbf series, vs-10etf0...fp-m3 series www.vishay.com vishay semiconductors revision: 11-feb-16 1 document number: 94089 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fast soft recovery r ectifier diode, 10 a features ? glass passivated pellet chip junction ? 150 c max. operation junction temperature ? designed and qualified according to jedec ? -jesd 47 ? fully isolated package (v ins = 2500 v rms ) ? ul e78996 approved ? material categorization: ? for definitions of compliance please see www.vishay.com/doc?99912 applications these devices are intended for use in output rectification and freewheeling in inverters, choppers and converters as well as in input rectification where severe restrictions on conducted emi should be met. description the vs-10etf0..fp... fast soft re covery rectifier series has been optimized for combined short reverse recovery time and low forward voltage drop. ? the glass passivation ensures st able reliable operation in the most severe te mperature and power cycling conditions. product summary package to-220fp i f(av) 10 a v r 200 v, 400 v, 600 v v f at i f 1.2 v i fsm 160 a t rr 50 ns t j max. 150 c diode variation single die snap factor 0.5 2 1 cathode 3 anode to-220 full-pak 1 2 3 a v aila b le major ratings and characteristics symbol characteristics values units v rrm 200 to 600 v i f(av) sinusoidal waveform 10 a i fsm 160 t rr 1 a, 100 a/s 50 ns v f 10 a, t j = 25 c 1.2 v t j -40 to +150 c voltage ratings part number v rrm , maximum peak reverse voltage v v rsm , maximum non-repetitive peak reverse voltage v i rrm at 150 c ma vs-10etf02fppbf, vs-10etf02fp-m3 200 300 3 VS-10ETF04FPPBF, vs-10etf04fp-m3 400 500 vs-10etf06fppbf, vs-10etf06fp-m3 600 700
vs-10etf0...fppbf series, vs-10etf0...fp-m3 series www.vishay.com vishay semiconductors revision: 11-feb-16 2 document number: 94089 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 absolute maximum ratings parameter symbol test conditions values units maximum average forward current i f(av) t c = 98 c, 180 conduction half sine wave 10 a maximum peak one cycle ? non-repetitive surge current i fsm 10 ms sine pulse, rated v rrm applied 150 10 ms sine pulse, no voltage reapplied 160 maximum i 2 t for fusing i 2 t 10 ms sine pulse, rated v rrm applied 112.5 a 2 s 10 ms sine pulse, no voltage reapplied 160 maximum i 2 ? t for fusing i 2 ? t t = 0.1 to 10 ms, no voltage reapplied 1600 a 2 ? s electrical specifications parameter symbol test conditions values units maximum forward voltage drop v fm 10 a, t j = 25 c 1.2 v forward slope resistance r t t j = 150 c 23.5 m ? threshold voltage v f(to) 0.85 v maximum reverse leakage current i rm t j = 25 c v r = rated v rrm 0.1 ma t j = 150 c 3.0 recovery characteristics parameter symbol test conditions values units reverse recovery time t rr i f at 10 a pk ? 25 a/s ? 25 c 200 ns reverse recovery current i rr 2.75 a reverse recovery charge q rr 0.32 c snap factor s0.6 i fm t rr dir dt i rm(rec) q rr t thermal - mechanical specifications parameter symbol test conditions values units maximum junction and storage ? temperature range t j , t stg -40 to +150 c maximum thermal resistance ? junction to case r thjc dc operation 2.5 c/w maximum thermal resistance ? junction to ambient r thja 62 typical thermal resistance, ? case to heatsink r thcs mounting surface, smooth, and greased 0.5 approximate weight 2g 0.07 oz. mounting torque minimum 6 (5) kgf cm (lbf in) maximum 12 (10) marking device case style to-220 full-pak 10etf02fp 10etf04fp 10etf06fp
vs-10etf0...fppbf series, vs-10etf0...fp-m3 series www.vishay.com vishay semiconductors revision: 11-feb-16 3 document number: 94089 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 1 - current rati ng characteristics fig. 2 - current rati ng characteristics fig. 3 - forward power loss characteristics fig. 4 - forward power loss characteristics fig. 5 - maximum non-re petitive surge current fig. 6 - maximum non-re petitive surge current 110 100 90 80 150 0 6 maximum allowable case temperature (c) average forward current (a) 4 28 130 60 30 90 180 10 12 10etf.. series r thjc (dc) = 2.5 c/w 140 120 120 ? conduction angle 110 100 90 150 0 1 0 maximum allowable case temperature (c) average forward current (a) 6 2 1 2 130 60 30 180 16 18 10etf.. series r thjc (dc) = 2.5 c/ w 140 120 ? cond u ction period dc 48 14 90 120 4 0 16 0 maximum average forward power loss (w) average forward current (a) 8 10 10 10etf.. series t j = 150 c 12 8 46 180 rms limit cond u ction angle 2 2 6 14 60 30 90 120 ? 4 0 20 0 maximum average forward power loss (w) average forward current (a) 12 12 16 10etf.. series t j = 150 c 16 8 ? cond u ction period dc 48 60 30 180 90 120 rms limit 160 80 40 1 10 100 peak half sine wave forward current (a) number of equal amplitude half cycle current pulses (n) 140 60 100 120 10etf.. series initial t j = 150 c at 60 hz 0.0083 s at 50 hz 0.0100 s at any rated load condition and w ith rated v rrm applied follo w ing s u rge. 180 80 40 0.01 0.1 1 peak half sine wave forward current (a) pulse train duration (s) 140 60 100 120 10etf.. series initial t j = 150 c no voltage reapplied rated v rrm reapplied maximum non-repetitive surge current versus pulse train duration. 160
vs-10etf0...fppbf series, vs-10etf0...fp-m3 series www.vishay.com vishay semiconductors revision: 11-feb-16 4 document number: 94089 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 7 - forward voltage drop characteristics fig. 8 - recovery time characteristics, t j = 25 c fig. 9 - recovery time characteristics, t j = 150 c fig. 10 - recovery charge characteristics, t j = 25 c fig. 11 - recovery charge characteristics, t j = 150 c fig. 12 - recovery current characteristics, t j = 25 c 100 10 1 0.5 1.0 1.5 2.0 2.5 3.0 instantaneous forward current (a) instantaneous forward voltage (v) t j = 150 c t j = 25 c 10etf.. series t rr - typical reverse recovery time (s) di/dt - rate of fall of forward current (a/s) 0 0.1 0.2 0.3 0.4 0 40 80 120 160 200 1 a 5 a 10 a t j = 25 c i = 20 a fm 8 a 2 a 0.4 0.3 0 0 40 80 120 160 200 t rr - typical reverse recovery time (s) di/dt - rate of fall of forward current (a/s) 10etf.. series t j = 150 c 0.1 0.2 i fm = 20 a i fm = 1 a i fm = 10 a i fm = 5 a i fm = 2 a 1.4 0.6 0 0 40 80 120 160 200 q rr - typical reverse recovery charge (c) di/dt - rate of fall of forward current (a/s) 10etf.. series t j = 25 c 0.2 0.4 1.0 0.8 1.2 i fm = 20 a i fm = 1 a i fm = 10 a i fm = 5 a i fm = 2 a 2.5 1.5 0 0 40 80 120 160 200 q rr - typical reverse recovery charge (c) di/dt - rate of fall of forward current (a/s) 10etf.. series t j = 150 c 0.5 1.0 2.0 i fm = 20 a i fm = 1 a i fm = 10 a i fm = 5 a i fm = 2 a 15 9 0 0 40 80 120 160 200 i rr - typical reverse recovery current (a) di/dt - rate of fall of forward current (a/s) 10etf.. series t j = 25 c 3 6 12 i fm = 20 a i fm = 1 a i fm = 10 a i fm = 5 a i fm = 2 a
vs-10etf0...fppbf series, vs-10etf0...fp-m3 series www.vishay.com vishay semiconductors revision: 11-feb-16 5 document number: 94089 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 13 - recovery current characteristics, t j = 150 c fig. 14 - thermal impedance z thjc characteristics 20 12 0 0 40 80 120 160 200 i rr - typical reverse recovery current (a) di/dt - rate of fall of forward current (a/s) 10etf.. series t j = 150 c 4 8 16 i fm = 20 a i fm = 1 a i fm = 10 a i fm = 5 a i fm = 2 a 0.1 1 10 10 0.0001 0.001 0.01 0.1 1 square wave pulse duration (s) z thjc - transient thermal impedance (c/w) single p u lse 10etf.. series steady state v al u e (dc operation) d = 0.50 d = 0.33 d = 0.25 d = 0.17 d = 0.08
vs-10etf0...fppbf series, vs-10etf0...fp-m3 series www.vishay.com vishay semiconductors revision: 11-feb-16 6 document number: 94089 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 ordering information table ordering information (example) preferred p/n quantity per t/r minimum order quantity packaging description vs-10etf02fppbf 50 1000 anti static plastic tubes vs-10etf02fp-m3 50 1000 anti static plastic tubes VS-10ETF04FPPBF 50 1000 anti static plastic tubes vs-10etf04fp-m3 50 1000 anti static plastic tubes vs-10etf06fppbf 50 1000 anti static plastic tubes vs-10etf06fp-m3 50 1000 anti static plastic tubes links to related documents dimensions www.vishay.com/doc?95005 part marking information to-220 fp pbf www.vishay.com/doc?95009 to-220 fp -m3 www.vishay.com/doc?95440 1 - current rating (10 = 10 a) - vishay semiconductors product 2 - circuit configuration: e = single diode 3 - package: t = to-220 4 - type of silicon: f = fast soft recovery rectifier 5 - voltage code x 100 = v rrm 6 - full-pak 7 8 - pbf = lead (pb)-free and rohs-compliant environmental digit: -m3 = halogen-free, rohs-compliant, and terminations lead (pb)-free 02 = 200 v 04 = 400 v 06 = 600 v device code 5 1 3 2 4 6 7 8 10 vs- e t f 06 fp pbf
outline dimensions www.vishay.com vishay semiconductors revision: 20-jul-11 1 document number: 95005 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 dimensions in millimeters 5 0.5 3.3 3.1 5 0.5 0.9 0.7 2.54 typ. 2.54 typ. 10.6 10.4 3.7 3.2 7.31 6.91 0.61 0.38 2.85 2.65 2.8 2.6 1.4 1.3 10 4.8 4.6 16.0 15.8 16.4 15.4 (2 places) r 0.7 r 0.5 hole ? 3.4 3.1 typ. 1.15 1.05 13.56 13.05 lead assignments diode s 1 + 2 - cathode 3 - anode conforms to jedec outline to-220 full-pak
legal disclaimer notice www.vishay.com vishay revision: 13-jun-16 1 document number: 91000 disclaimer ? all product, product specifications and data ar e subject to change with out notice to improve reliability, function or design or otherwise. vishay intertechnology, inc., its affiliates, agents, and employee s, and all persons acting on it s or their behalf (collectivel y, vishay), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. vishay makes no warranty, representation or guarantee regarding the suitability of th e products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicable law, vi shay disclaims (i) any and all liability arising out of the application or use of any product , (ii) any and all liability, including without limitation specia l, consequential or incidental damages, and (iii) any and all implied warranties, includ ing warranties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of products for certain types of applicatio ns are based on vishays knowledge of typical requirements that are often placed on vishay products in generic applications. such statements are not binding statements about the suitability of products for a particular applic ation. it is the customers responsibility to validate tha t a particular product with the prope rties described in the product sp ecification is suitable for use in a particular application. parameters provided in datasheets and / or specifications may vary in different ap plications and perfor mance may vary over time. all operating parameters, including ty pical parameters, must be va lidated for each customer application by the customer s technical experts. product specifications do not expand or otherwise modify vishays term s and conditions of purchase, including but not limited to the warranty expressed therein. except as expressly indicated in writing, vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the vishay product could result in personal injury or death. customers using or selling vishay product s not expressly indicated for use in such applications do so at their own risk. please contact authorized vishay personnel to obtain writ ten terms and conditions rega rding products designed for such applications. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is gran ted by this document or by any conduct of vishay. product names and markings noted herein may be trademarks of their respective owners.
|
